The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
Identifieur interne : 000057 ( Russie/Analysis ); précédent : 000056; suivant : 000058The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
Auteurs : RBID : Pascal:11-0196654Descripteurs français
- Pascal (Inist)
- Croissance cristalline, Phase gamma, Analyse thermique différentielle, Diffraction RX, Section isotherme, Solution solide, Sphalérite, Méthode Bridgman, Croissance cristalline en phase fondue, Conductivité type p, Bande interdite, Propriété électronique, Structure bande, Diagramme phase, Séléniure de cuivre, Séléniure de gallium, Chalcopyrite, Cuivre Indium Séléniure Mixte, Monocristal, Sulfure, Semiconducteur, Alliage quaternaire, CuGaSe2, CuInSe2, 8110, 8110F, 8130B.
English descriptors
- KwdEn :
- Band structure, Bridgman method, Chalcopyrite, Copper Indium Selenides Mixed, Copper selenides, Crystal growth, Crystal growth from melts, Differential thermal analysis, Electronic properties, Energy gap, Gallium selenides, Gamma phase, Isothermal section, Monocrystals, P type conductivity, Phase diagrams, Quaternary alloys, Semiconductor materials, Solid solutions, Sphalerite, Sulfides, XRD.
Abstract
Phase equilibria in the CuInSe2-CuGaSe2-2CdS system are investigated using differential-thermal analysis and phase X-ray diffraction. Isothermal section of the system at 870 K, polythermal section 'CuIn0.75Ga0.25Se2'-2CdS, and the liquidus projection in the CuInSe2-rich part have been constructed. Single crystals of the intermediate γ-solid solutions with the sphalerite structure have been grown by Bridgman method. The crystals are of the p-type conductivity, and their band gap energy varies from 1.16 to 1.32 eV.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 003312
- to stream Main, to step Repository: 002353
- to stream Russie, to step Extraction: 000057
Links to Exploration step
Pascal:11-0196654Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The CuGaSe<sub>2</sub>-CuInSe<sub>2</sub>-2CdS system and single crystal growth of the γ-phase</title><author><name sortKey="Parasyuk, O V" uniqKey="Parasyuk O">O. V. Parasyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and Inorganic Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Atuchin, V V" uniqKey="Atuchin V">V. V. Atuchin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>2 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk 630090</wicri:noRegion></affiliation></author><author><name sortKey="Romanyuk, Y E" uniqKey="Romanyuk Y">Y. E. Romanyuk</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>Dübendorf 8600</s2><s3>CHE</s3><sZ>3 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>Dübendorf 8600</wicri:noRegion></affiliation></author><author><name sortKey="Marushko, L P" uniqKey="Marushko L">L. P. Marushko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and Inorganic Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Piskach, L V" uniqKey="Piskach L">L. V. Piskach</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and Inorganic Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Olekseyuk, I D" uniqKey="Olekseyuk I">I. D. Olekseyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of General and Inorganic Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Lutsk 43025</wicri:noRegion></affiliation></author><author><name sortKey="Volkov, S V" uniqKey="Volkov S">S. V. Volkov</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>V.I. Vemadskii Institute for General and Inorganic Chemistry of the Ukrainian National Academy of Sciences, Palladina Ave 32-34</s1><s2>Kyiv 03680</s2><s3>UKR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Kyiv 03680</wicri:noRegion></affiliation></author><author><name sortKey="Pekhnyo, V I" uniqKey="Pekhnyo V">V. I. Pekhnyo</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>V.I. Vemadskii Institute for General and Inorganic Chemistry of the Ukrainian National Academy of Sciences, Palladina Ave 32-34</s1><s2>Kyiv 03680</s2><s3>UKR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Kyiv 03680</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0196654</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0196654 INIST</idno><idno type="RBID">Pascal:11-0196654</idno><idno type="wicri:Area/Main/Corpus">003312</idno><idno type="wicri:Area/Main/Repository">002353</idno><idno type="wicri:Area/Russie/Extraction">000057</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Band structure</term><term>Bridgman method</term><term>Chalcopyrite</term><term>Copper Indium Selenides Mixed</term><term>Copper selenides</term><term>Crystal growth</term><term>Crystal growth from melts</term><term>Differential thermal analysis</term><term>Electronic properties</term><term>Energy gap</term><term>Gallium selenides</term><term>Gamma phase</term><term>Isothermal section</term><term>Monocrystals</term><term>P type conductivity</term><term>Phase diagrams</term><term>Quaternary alloys</term><term>Semiconductor materials</term><term>Solid solutions</term><term>Sphalerite</term><term>Sulfides</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Croissance cristalline</term><term>Phase gamma</term><term>Analyse thermique différentielle</term><term>Diffraction RX</term><term>Section isotherme</term><term>Solution solide</term><term>Sphalérite</term><term>Méthode Bridgman</term><term>Croissance cristalline en phase fondue</term><term>Conductivité type p</term><term>Bande interdite</term><term>Propriété électronique</term><term>Structure bande</term><term>Diagramme phase</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Chalcopyrite</term><term>Cuivre Indium Séléniure Mixte</term><term>Monocristal</term><term>Sulfure</term><term>Semiconducteur</term><term>Alliage quaternaire</term><term>CuGaSe2</term><term>CuInSe2</term><term>8110</term><term>8110F</term><term>8130B</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Phase equilibria in the CuInSe<sub>2</sub>-CuGaSe<sub>2</sub>-2CdS system are investigated using differential-thermal analysis and phase X-ray diffraction. Isothermal section of the system at 870 K, polythermal section 'CuIn<sub>0.75</sub>Ga<sub>0.25</sub>Se<sub>2</sub>'-2CdS, and the liquidus projection in the CuInSe<sub>2</sub>-rich part have been constructed. Single crystals of the intermediate γ-solid solutions with the sphalerite structure have been grown by Bridgman method. The crystals are of the p-type conductivity, and their band gap energy varies from 1.16 to 1.32 eV.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>318</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The CuGaSe<sub>2</sub>-CuInSe<sub>2</sub>-2CdS system and single crystal growth of the γ-phase</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>The 16th International Conference on Crystal Growth (ICCG16)/The 14th International Conference on Vapor Growth and Epitaxy (ICVGE14), 8-13 August 2010, Beijing, China</s1></fA09><fA11 i1="01" i2="1"><s1>PARASYUK (O. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>ATUCHIN (V. V.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROMANYUK (Y. E.)</s1></fA11><fA11 i1="04" i2="1"><s1>MARUSHKO (L. P.)</s1></fA11><fA11 i1="05" i2="1"><s1>PISKACH (L. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>OLEKSEYUK (I. D.)</s1></fA11><fA11 i1="07" i2="1"><s1>VOLKOV (S. V.)</s1></fA11><fA11 i1="08" i2="1"><s1>PEKHNYO (V. I.)</s1></fA11><fA12 i1="01" i2="1"><s1>CHEN (Chuangtian)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>KUECH (Thomas F.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>NISHINAGA (Tatau)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>ZHENG (Lili)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Department of General and Inorganic Chemistry, Volyn National University, Voli Ave 13</s1><s2>Lutsk 43025</s2><s3>UKR</s3><sZ>1 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS</s1><s2>Novosibirsk 630090</s2><s3>RUS</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Laboratory for Thin Films and Photovoltaics, Empa, Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129</s1><s2>Dübendorf 8600</s2><s3>CHE</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>V.I. Vemadskii Institute for General and Inorganic Chemistry of the Ukrainian National Academy of Sciences, Palladina Ave 32-34</s1><s2>Kyiv 03680</s2><s3>UKR</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA15 i1="01"><s1>Chinese Academy of Sciences</s1><s3>CHN</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Wisconsin-Madison</s1><s3>USA</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>The University of Tokyo</s1><s3>JPN</s3><sZ>3 aut.</sZ></fA15><fA15 i1="04"><s1>Tsinghua University</s1><s3>CHN</s3><sZ>4 aut.</sZ></fA15><fA18 i1="01" i2="1"><s1>International Organization for Crystal Growth (IOCG)</s1><s3>INT</s3><s9>org-cong.</s9></fA18><fA20><s1>332-336</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000194470600660</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>28 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0196654</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Phase equilibria in the CuInSe<sub>2</sub>-CuGaSe<sub>2</sub>-2CdS system are investigated using differential-thermal analysis and phase X-ray diffraction. Isothermal section of the system at 870 K, polythermal section 'CuIn<sub>0.75</sub>Ga<sub>0.25</sub>Se<sub>2</sub>'-2CdS, and the liquidus projection in the CuInSe<sub>2</sub>-rich part have been constructed. Single crystals of the intermediate γ-solid solutions with the sphalerite structure have been grown by Bridgman method. The crystals are of the p-type conductivity, and their band gap energy varies from 1.16 to 1.32 eV.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A10F</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A30B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Croissance cristalline</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Crystal growth</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Phase gamma</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Gamma phase</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Fase gamma</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Analyse thermique différentielle</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Differential thermal analysis</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>XRD</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Section isotherme</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Isothermal section</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Sección isotérmica</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Solution solide</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Solid solutions</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Sphalérite</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Sphalerite</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Méthode Bridgman</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Bridgman method</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Croissance cristalline en phase fondue</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Crystal growth from melts</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Conductivité type p</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>P type conductivity</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Conductividad tipo p</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Bande interdite</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Energy gap</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Electronic properties</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Structure bande</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Band structure</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Diagramme phase</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Phase diagrams</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Chalcopyrite</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Cuivre Indium Séléniure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Copper Indium Selenides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Monocristal</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Monocrystals</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Sulfure</s0><s2>NA</s2><s5>29</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Sulfides</s0><s2>NA</s2><s5>29</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>30</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>30</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Alliage quaternaire</s0><s5>31</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Quaternary alloys</s0><s5>31</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>CuGaSe2</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8110</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8110F</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8130B</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>129</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>ICCG16 International Conference on Crystal Growth</s1><s2>16</s2><s3>Beijing CHN</s3><s4>2010-08-08</s4></fA30><fA30 i1="02" i2="1" l="ENG"><s1>ICVGE14 International Conference on Vapor Growth and Epitaxy</s1><s2>14</s2><s3>Beijing CHN</s3><s4>2010-08-08</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Russie/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000057 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd -nk 000057 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Russie
|étape= Analysis
|type= RBID
|clé= Pascal:11-0196654
|texte= The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
}}
| This area was generated with Dilib version V0.5.77. |  |